Epitaxial Growth
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Epitaxial Growth
Cedova has a wealth of experience in growing the material systems listed below. The reactors are also qualified for
these material systems. The growth of 2" and 3" wafers is possible.
Capabilities
- Single and Multiwafer MOVPE reactors
- InGaAs(P)/InP (1000 - 2000nm)
- AlGaInAs/InP (1000 -2000nm)
- AlGaAs/GaAs (750 - 880nm)
- AlGaInP/GaAs (660 - 680nm)
- p-type / n-type doping
- (strained) layer MQW
- Re-growth for gratings, mesa etc.
- Selective epitaxy for integration
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